FDS6675BZ
Manufacturer:
On Semiconductor
Mfr.Part #:
FDS6675BZ
Datasheet:
Description:
MOSFETs SO-8 SMD/SMT P-Channel number of channels:1 2.5 W -30 V Continuous Drain Current (ID):11 A 62 nC
| Parameter | Value |
|---|---|
| Length | 5 mm |
| Width | 4 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 21.8 MΩ |
| Height | 1.5 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 0.13 g |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | -2 V |
| Number of Channels | 1 |
| Input capacitance | 2.47 nF |
| Continuous Drain Current (ID) | 11 A |
| Rds On Max | 13 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 3 ns |
| Turn-Off Delay Time | 120 ns |
| Element Configuration | Single |
| Rise Time | 7.8 ns |
| Dual Supply Voltage | -30 V |
| Gate Charge | 62 nC |
| Drain to Source Resistance | 10.8 mΩ |
| Nominal Vgs | -2 V |
| Gate to Source Voltage (Vgs) | 25 V |
| Drain to Source Breakdown Voltage (Vds) | -30 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 3 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 177
Distributors
pcbx
pcbxUnit Price$0.69821
Ext.Price$0.69821
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.69821 | $0.69821 |
| 10 | $0.57254 | $5.72540 |
| 25 | $0.52894 | $13.22350 |
| 50 | $0.48866 | $24.43300 |
| 100 | $0.45144 | $45.14400 |
| 300 | $0.41225 | $123.67500 |
| 500 | $0.37646 | $188.23000 |
| 1000 | $0.35657 | $356.57000 |